NPT25015 NPT25015 page 1 features ? optimized for cw, pulsed, wimax, and other applications from dc - 3000 mhz ? 23w p 3db peak envelope power (pep) ? 1.5w linear power @ 2% evm for single carrier ofdm, 10.3db peak/average, 3.5mhz channel bandwidth, 14db gain, 23.5% efficiency, 2500-2700mhz ? 100% rf tested ? thermally-enhanced industry standard package ? high reliability gold metallization process ? lead-free and rohs compliant ? subject to ear99 export control dc - 3000 mhz 23 watt, 28 volt gan hemt gallium nitride 28v, 23w rf power transistor built using the sigantic ? nrf1 process - a proprietary gan-on-silicon technology typical 2-tone performance: v ds = 28v, i dq = 200ma, frequency = 2500mhz, tone spacing = 1.0mhz, t c = 25c measured in nitronex test fixture symbol parameter min typ max units p 3db,pep peak envelope power at 3db compression 20 25 - w p 1db,pep peak envelope power at 1db compression - 15 - w g ss small signal gain 13.0 14.0 15.0 db h drain effciency at 3db compression 53 58 - % typical ofdm performance: v ds = 28v, i dq = 200ma, single carrier ofdm waveform 64-qam 3/4, 8 burst, continuous frame data, 10 mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probability on ccdf. frequency = 2500 - 2700mhz. p out, avg = 1.5w, t c = 25c. measured in load pull system (refer to table 1 and figure 1) symbol parameter typ units g p power gain 14.0 db h drain effciency 23.5 % evm error vector magnitude 2.0 % nds-004 rev 4, april 2013
NPT25015 NPT25015 page 2 symbol parameter min typ max units off characteristics v bds drain-source breakdown voltage (v gs = -8v, i d = 8ma) 100 - - v i dlk drain-source leakage current (v gs = -8v, v ds = 60v) - - 4 ma on characteristics v t gate threshold voltage (v ds = 28v, i d = 8ma) -2.3 -1.8 -1.3 v v gsq gate quiescent voltage (v ds = 28v, i d = 200ma) -2.0 -1.5 -1.0 v r on on resistance (v gs = 2v, i d = 60ma) - 0.45 0.50 w i d,max drain current (v ds = 7v pulsed, 300ms pulse width, 0.2% duty cycle) - 5.0 - a dc specifcations: t c = 25c absolute maximum ratings: not simultaneous, t c = 25c unless otherwise noted symbol parameter max units v ds drain-source voltage 100 v v gs gate-source voltage -10 to 3 v p t total device power dissipation (derated above 25c) 28 w q jc thermal resistance (junction-to-case) 6.25 c/w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 c hbm human body model esd rating (per jesd22-a114) 1a (>250v) mm machine model esd rating (per jesd22-a115) m1 (>50v) msl moisture sensitivity level (per ipc/jedec j-std-20) @ 260c peak package temperature 3 nds-004 rev 4, april 2013
NPT25015 NPT25015 page 3 table 1: optimum impedance characteristics for linear ofdm tuning, single carrier ofdm waveform 64-qam 3/4, 8 burst, continuous frame data, 10 mhz channel bandwidth. peak/avg = 10.3db @ 0.01% probability on ccdf z s is the source impedance presented to the device. z l is the load impedance presented to the device. frequency (mhz) z s ( w ) z l ( w ) p out (w) gain (db) drain effciency (%) 2500 5.2 - j 1.6 3.3 + j 1.7 1.5 14.5 25 2600 4.6 - j 1.9 3.1 + j 2.7 1.5 14.5 25 2700 4.0 - j 2.2 2.9 + j 4.3 1.5 14.4 24 figure 1 - optimum impedance characteristics for ofdm tuning, v ds = 28v, i dq = 200ma load-pull data, reference plane at device leads v ds =28v, i dq =200ma, t a =25c unless otherwise noted table 2: optimum impedance characteristics for cw p sat (iflhqf dqg dlq frequency (mhz) z s ( w ) z l ( w ) p sat (w) g ss (db) drain effciency (%) 2500 3.7 - j 4.7 6.9 - j 1.2 23 14.5 60 nds-004 rev 4, april 2013
NPT25015 NPT25015 page 4 figure 2 - typical ofdm performance at 2500mhz and 28v versus i dq load-pull data, reference plane at device leads v ds =28v, i dq =200ma, t a =25c unless otherwise noted figure 3 - p 3db,pep and drain effciency versus temperature at 2500mhz, application board figure 4 - power derating curve figure 5 - mttf of nrf1 devices as a function of junction temperature typical device characteristics v ds =28v, i dq =200ma, t a =25c unless otherwise noted nds-004 rev 4, april 2013
NPT25015 NPT25015 page 5 figure 6 - app-NPT25015-25 demonstration board and schematic rf in rf out v gs v ds app-NPT25015-25, 2500-2700mhz linear wimax application board 802.16e single carrier ofdm, 64-qam 3/4, 8-burst, 20ms frame 75% flled, 10mhz channel bandwidth, par=10.3db @ 0.01% ccdf detailed design information and data available at www.nitronex.com name value tolerance vendor vendor number c1 5.6pf +/- 0.1pf atc atc600f5r6b c2 2.2pf +/- 0.1pf atc atc600f2r 2b c3 3.3pf +/- 0.1pf atc atc600f3r3b c4, c9 1.0uf 10% panasonic ecj-5yb2a105m c5, c8 0.1uf 10% kemet c1206c104k1ractu c6, c7 0.01uf 10% avx 12061c103k at2a c10 150uf 20% nichicon upw1c151med c11 270uf 20% united chemi-con elxy630ell271mk25s c12 1.0pf +/- 0.1pf atc atc600f1r0b c13, c15 33pf 5% atc atc600f330b c14, c16 1000pf 10% kemet c0805c102k1ractu pa1 -- -- -- NPT25015d r1 49.9 ohm 1% panasonic erj-2rkf49r9x r3 0.33 ohm 1% panasonic erj-6rqfr33v -- -- -- -- coin to mount pa1 substrate rogers r04350, t = 30mil e r = 3.5 table 2: app-NPT25015-25 demonstration board bill of materials nds-004 rev 4, april 2013
NPT25015 NPT25015 page 6 figure 7 - gain, effciency, evm at 2500mhz figure 8 - gain, effciency, evm at 2600mhz figure 9 - gain, effciency, evm at 2700mhz 0 5 10 15 20 25 30 35 40 23 25 27 29 31 33 35 37 39 pout (dbm) gain (db), drain efficiency (%) 0 1 2 3 4 5 6 7 8 evm (%) gain de evm (%) 0 5 10 15 20 25 30 35 40 23 25 27 29 31 33 35 37 39 pout (dbm) gain (db), drain efficiency (%) 0 1 2 3 4 5 6 7 8 evm (%) gain de evm (%) 0 5 10 15 20 25 30 35 40 23 25 27 29 31 33 35 37 39 pout (dbm) gain (db), drain efficiency (%) 0 1 2 3 4 5 6 7 8 evm (%) gain de evm (%) app-NPT25015-25, 2500-2700mhz linear wimax application board 802.16e single carrier ofdm, 64-qam 3/4, 8-burst, continuous frame data, 10mhz channel bandwidth, par=10.3db @ 0.01% ccdf detailed design information and data available at www.nitronex.com nds-004 rev 4, april 2013
NPT25015 NPT25015 page 7 figure 10 - d package dimensions and pinout 1 2 3 4 8 6 5 7 9 cha m f er 1. n c 2 . g a t e 3 . g a t e 4. n c 7. d r ain 6 . drain 5 . nc 8. n c 9 . sou r c e pa d ( b o t t om) e b d c a f (6x) f (8x) g 1 s e a t ing p lan e g m s e a ting p l a n e l h a/2 d / 2 .150 solder paste .080" x .120" (typ) solder paste .020" x .040" (8x typ) .100 .105 .176 .145 .140 heat sink pedestal pwb cutout r.016 (4x typ) .055 .180 .030 pwb pad (8x typ) solder mask .005" relief (typ) figure 11 - mounting footprint ordering information part number order multiple description NPT25015dt 97 tube; NPT25015 in d (psop2) package NPT25015dr 1500 tape and reel; NPT25015 in d (psop2) package inches millimeters dim min max min max a 0.18 9 0.19 6 4.80 4.98 b 0.15 0 0.157 3.81 3.99 c 0.107 0.123 2.72 3.12 d 0.071 0.870 1.80 2 2.1 e 0.230 0.244 5.84 6.19 f 0.050 bsc 1.270 bsc f 0.0138 0.0192 0.35 0.49 g 0.055 0.061 1.40 1.55 g1 0.000 0.004 0.00 0.10 h 0.075 0.098 1.91 2.50 l 0.016 0.035 0.41 0.89 m 0 8 0 8 1: to fnd a nitronex contact in your area, visit our website at http://www.nitronex.com 1. gate 2. gate 3. gate 4. gate 5. drain 6. drain 7. drain 8. drain 9. source pad (bottom) nds-004 rev 4, april 2013
NPT25015 NPT25015 page 8 nitronex, llc 2305 presidential drive durham, nc 27703 usa +1.919.807.9100 (telephone) +1.919.807.9200 (fax) info@nitronex.com www.nitronex.com additional information this part is lead-free and is compliant with the rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). important notice nitronex, llc reserves the right to make corrections, modifcations, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to nitronex terms and conditions of sale supplied at the time of order acknowledgment. the latest information from nitronex can be found either by calling nitronex at 1-919-807-9100 or visiting our website at www.nitronex.com. nitronex warrants performance of its packaged semiconductor or die to the specifcations applicable at the time of sale in accordance with nitronex standard warranty. testing and other quality control techniques are used to the extent nitronex deems necessary to support the warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. nitronex assumes no liability for applications assistance or customer product design. customers are responsible for their product and applications using nitronex semiconductor products or services. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. nitronex does not warrant or represent that any license, either express or implied, is granted under any nitronex patent right, copyright, mask work right, or other nitronex intellectual property right relating to any combination, machine or process in which nitronex products or services are used. reproduction of information in nitronex data sheets is permitted if and only if said reproduction does not alter any of the information and is accompanied by all associated warranties, conditions, limitations and notices. any alteration of the contained information invalidates all warranties and nitronex is not responsible or liable for any such statements. nitronex products are not intended or authorized for use in life support systems, including but not limited to surgical implants into the body or any other application intended to support or sustain life. should buyer purchase or use nitronex, llc products for any such unintended or unauthorized application, buyer shall indemnify and hold nitronex, llc, its of f cers, employees, subsidiaries, affliates, distributors, and its successors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, notwithstanding if such claim alleges that nitronex was negligent regarding the design or manufacture of said products. nitronex and the nitronex logo are registered trademarks of nitronex, llc. all other product or service names are the property of their respective owners. ? nitronex, llc 2012. all rights reserved. nds-004 rev 4, april 2013
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